Spiral Inductor Substrate Loss Modeling in Silicon RFICs - Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
نویسنده
چکیده
Spiral inductors constructed in Silicon IC technologies possess limited quality factors due to series resistive losses, and losses within the semiconducting substrate. A new model for the less understood substrate losses illustrates how these losses can be minimized, providing quality factor increases of up to 230 percent over un-optimized designs.
منابع مشابه
Compact Wide-Band Modelling of Spiral Inductors for RFICs using Particle Swarm Optimization
The exponential growth in commercial wireless and wired communication market has given rise to considerable interest in low power, low noise and low cost radio frequency integrated circuits (RFIC). Traditionally RFICs are fabricated using the expensive GaAs technologies for frequencies upto 40GHz. The development of deep sub micron CMOS technology processes allow silicon RFICs to compete with h...
متن کاملN Dimensional Orthogonal QPSK Signaling with Discrete Prolate Spheroidal Sequences - Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
modula t ion method, previously referred t o as QPSK, is described in fur ther detail. An bandwidth and bit error per formance i s given, along wi th results when the se t of Discrete Sequences are used as the optimal pulse shaping func t ions . Particular a t ten t ion i s given under channel bandlimiting, nonlinear transformations, and fading conditions. K , Discrete Prolate Spheroidal Sequen...
متن کاملAnalysis, Design and Optimization of On-Chip Inductors on Sapphire for Gan based Rfics
The on chip spiral inductors are one of the key components in the development of the RFIC‟s as they determine the performance of the circuits such as VCO, LNA, mixers etc. In this paper, the design of an inductor for GaN based RFICs operating in C-band is presented. Sapphire (Al2O3), which is a common substrate for GaN, is used as substrate and silicon nitride (Si3N4), which is a common passiva...
متن کاملA Low-Noise RF Voltage-Controlled Oscillator Using On-Chip High-Q Three-Dimensional Coil Inductor and Micromachined Variable Capacitor
A RF voltage-controlled oscillator (VCO) employs an onchip, high-Q, three-dimensional (3-D) coil inductor and micromachined variable capacitor for frequency tuning. Unlike conventional spiral inductors, the 3-D inductor minimizes the substrate loss and achieves a record Q of 30 at 1 GHz. The micromachined variable capacitor achieves a 15% tuning range with a nominal 2pF capacitance and a Q valu...
متن کاملPhysical Modeling of Spiral Inductors on Silicon
This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process param...
متن کامل